P2_12 InGaN quantum-well width w.r.t λ

Alexander Buccheri, Jasdeep Anand, Michael Gorley, Iain Weaver


We derive a value d=2.49 nm (3 s.f.), the required InGaN quantum well width, to produce a ‘true’ green laser of ~530 nm, using a simple infinite well model. ‘True green’ semiconductor lasers are the next generation of lasers for use in HD disc-reading devices.

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